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| Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 -0.05 0.15+0.1 -0.05 s Features q q q 3 Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 5 0.80.1 1.60.15 1 1 (0.5) (0.5) 1.00.1 1.60.1 2 (0.4) (0.3) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 3 15 125 125 -55 ~ +125 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector 0 to 0.1 0.450.1 EIAJ:SC-75 SSMini3-G1 Package Marking symbol : U s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Common emitter reverse transfer capacitance Power gain Noise figure (Ta=25C) Symbol VCBO VEBO hFE fT Cre PG NF * Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 200MHz VCB = 6V, IE = -1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz min 30 3 40 typ 0.750.15 max 0.20.1 Unit V V 260 0.72 V MHz 1 pF dB dB VBE 450 650 0.8 24 3.3 *h FE Rank classification Rank hFE Marking Symbol B 40 ~ 110 UB C 65 ~ 160 UC D 100 ~ 260 UD 475 Transistor PC -- Ta 150 12 Ta=25C 125 10 IB=100A 10 2SC4627 IC -- VCE 12 VCE=6V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 100 8 80A Collector current IC (mA) 18 8 60A 6 40A 75 6 50 4 4 20A 2 25 2 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE=6V 25 25C 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 360 hFE -- IC VCE=6V Forward current transfer ratio hFE 300 Collector current IC (mA) Ta=75C 20 -25C 240 Ta=75C 25C 120 -25C 15 180 10 25C Ta=75C 5 -25C 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 1200 120 Zrb -- IE Reverse transfer impedance Zrb () VCB=6V Ta=25C VCB=6V f=2MHz Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25C Transition frequency fT (MHz) 1000 100 2.0 800 80 1.6 600 60 1.2 400 40 0.8 200 20 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 476 Transistor Cob -- VCB 1.2 2SC4627 PG -- IE IE=0 f=1MHz Ta=25C 40 35 f=100MHz Rg=50 Ta=25C VCE=10V 6V 12 NF -- IE f=100MHz Rg=50k Ta=25C Collector output capacitance Cob (pF) 1.0 10 0.8 Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 8 0.6 6 0.4 4 VCE=6V, 10V 0.2 2 0 0 5 10 15 20 25 30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA) bie -- gie 20 0 bre -- gre Reverse transfer susceptance bre (mS) Forward transfer susceptance bfe (mS) 150 bfe -- gfe 10.7 25 0 - 0.4mA -1mA 100 150 -2mA 10.7 58 18 yie=gie+jbie VCE=10V -4mA 100 yre=gre+jbre VCE=10V -1 -4mA -2 Input susceptance bie (mS) 16 14 12 58 -2mA 100 -7mA -20 -1mA 58 IE=-7mA -40 150 -4mA 100 58 10 8 6 4 2 -1mA IE=- 0.5mA -3 -60 f=150MHz IE=-7mA 100 58 -4 100 -80 25 25 -5 f=150MHz -6 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 f=10.7MHz 0 0 3 6 9 12 15 -120 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe -- goe IE=- 0.5mA -1mA 1.2 150 -2mA -4mA 100 Output susceptance boe (mS) 1.0 0.8 -7mA 0.6 58 0.4 25 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 yoe=goe+jboe VCE=10V Output conductance goe (mS) 477 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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